
SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V CC = 3.3V, f RF = 2000MHz to 3000MHz, LO is high-side
injected for a 300MHz IF, P RF = -5dBm, P LO = 0dBm, T C = +25°C, unless otherwise noted.)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
V CC = 3.3V
-20
V CC = 3.3V
-20
T C = +85 ° C
V CC = 3.0V, 3.3V, 3.6V
-30
-30
-30
-40
T C = +25 ° C
T C = -30 ° C
-40
P LO = -3dBm, 0dBm, +3dBm
-40
-50
-50
-50
2300
2500
2700
2900
3100
3300
2300
2500
2700
2900
3100
3300
2300
2500
2700
2900
3100
3300
60
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
V CC = 3.3V
60
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
V CC = 3.3V
60
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
50
T C = -30 ° C, +25 ° C, +85 ° C
50
P LO = -3dBm, 0dBm, +3dBm
50
V CC = 3.0V, 3.3V, 3.6V
40
30
20
40
30
20
40
30
20
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
2000
2200
2400
2600
2800
3000
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
V CC = 3.3V
-20
-30
V CC = 3.3V
-20
-30
-40
T C = -30 ° C, +25 ° C, +85 ° C
-40
P LO = -3dBm, 0dBm, +3dBm
-40
V CC = 3.0V, 3.3V, 3.6V
-50
-50
-50
2300
2520
2740
2960
3180
3400
2300
2520
2740
2960
3180
3400
2300
2520
2740
2960
3180
3400
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
16
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